发明名称 SEMICONDUCTOR DEVICE EXHIBITING REDUCED PARASITICS AND METHOD FOR MAKING SAME
摘要 A semiconductor device includes a substrate and a gate stack disposed on the substrate. An upper layer of the gate stack is a metal gate conductor and a lower layer of the gate stack is a gate dielectric. A gate contact is in direct contact with the metal gate conductor.
申请公布号 US2012256277(A1) 申请公布日期 2012.10.11
申请号 US201113083893 申请日期 2011.04.11
申请人 DORIS BRUCE B.;CHENG KANGGUO;WONG KEITH KWONG HON 发明人 DORIS BRUCE B.;CHENG KANGGUO;WONG KEITH KWONG HON
分类号 H01L29/772;H01L21/28 主分类号 H01L29/772
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