Retargeting for Electrical Yield Enhancement

摘要

A mechanism is provided for electrical yield enhancement retargeting of photolithographic layouts. Optical proximity correction is performed on a set of target patterns in order to produce a set of optical proximity correction mask shapes. A set of lithographic contours is generated for each of the set of optical proximity correction mask shapes. A determination is made of electrical yield sensitivities for at least one shape in a set of shapes in the set of target patterns. A determination is also made as to an amount and a direction of retargeting for each of the at least one shape in the set of shapes based on the electrical yield sensitivity of the shape. A new set of target patterns with retargeted edges is generated for each shape in the at least one shape based on the amount and the direction of retargeting.