发明名称 |
CAPACITANCE SENSOR STRUCTURE |
摘要 |
A capacitance sensor structure includes a first sensor in a first direction and a second sensor in a second direction for sensing a variation in the mutual capacitance between the first sensor and the second sensor by applying an excitation signal to the first sensor and detecting a response signal from the second sensor. The sensing area of the second sensor is intentionally reduced to be much smaller than the sensing area of the first sensor for noise performance improvement of the mutual capacitance sensing.
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申请公布号 |
US2012256647(A1) |
申请公布日期 |
2012.10.11 |
申请号 |
US201213441483 |
申请日期 |
2012.04.06 |
申请人 |
TAO YI-HSIN;LIN CHIA-HSING;HSU CHE-HAO;HSU WEN-JUN;ELAN MICROELECTRONICS CORPORATION |
发明人 |
TAO YI-HSIN;LIN CHIA-HSING;HSU CHE-HAO;HSU WEN-JUN |
分类号 |
G01R27/26 |
主分类号 |
G01R27/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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