| 摘要 |
A nitride light emitting device and method of a nitride semiconductor is provided to remove a process of manufacturing a low temperature buffer layer by growing a film at high temperature without the buffer layer directly. A GaN semiconductor layer is manufactured to a structure of the emitting device. The n-type semiconductor layer(110) is directly formed on the substrate(100), and the n-type semiconductor layer has the thickness of 5um through 0.1um. An active layer(120) and p-type semiconductor layer(130) are formed on the n-type semiconductor layer. A light emitting device structure comprises an electrode while having a lateral type structure, a columnar structure or the structure of flip chip bonding. |
