发明名称 |
BIPHENYL DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS |
摘要 |
PURPOSE: A biphenyl derivative is provided to have excellent etching resistance high durability, and solvent resistance, to retrain generation of outgas during baking, and to form a resist underlayer not generating a distortion during etching of a substrate in a longitudinal and a lateral lines finer than 60 nm. CONSTITUTION: A biphenyl derivative is represented by chemical formula 1 or has a partial structure represented by chemical formula 2. In the chemical formulas, a ring structure Ar1 and Ar2 is a benzene ring or a naphthalene ring, x and y is respectively and independently 0 or 1, L is a single bond or a C1-20 alkylene group, L is a single bond or a C1-20 alkylene group. A resist underlayer material uses a polymer compound containing the biphenyl derivative as a part of a repeating unit and additionally contains organic solvent and/or a crosslinking agent and an acid generator. |
申请公布号 |
KR20120110048(A) |
申请公布日期 |
2012.10.09 |
申请号 |
KR20120030916 |
申请日期 |
2012.03.27 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
KORI DAISUKE;KINSHO TAKESHI;TAKEMURA KATSUYA;OGIHARA TSUTOMU;WATANABE TAKERU;URANO HIROYUKI |
分类号 |
C07C13/567;C07C15/24;G03F7/004 |
主分类号 |
C07C13/567 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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