发明名称 BIPHENYL DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS
摘要 PURPOSE: A biphenyl derivative is provided to have excellent etching resistance high durability, and solvent resistance, to retrain generation of outgas during baking, and to form a resist underlayer not generating a distortion during etching of a substrate in a longitudinal and a lateral lines finer than 60 nm. CONSTITUTION: A biphenyl derivative is represented by chemical formula 1 or has a partial structure represented by chemical formula 2. In the chemical formulas, a ring structure Ar1 and Ar2 is a benzene ring or a naphthalene ring, x and y is respectively and independently 0 or 1, L is a single bond or a C1-20 alkylene group, L is a single bond or a C1-20 alkylene group. A resist underlayer material uses a polymer compound containing the biphenyl derivative as a part of a repeating unit and additionally contains organic solvent and/or a crosslinking agent and an acid generator.
申请公布号 KR20120110048(A) 申请公布日期 2012.10.09
申请号 KR20120030916 申请日期 2012.03.27
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 KORI DAISUKE;KINSHO TAKESHI;TAKEMURA KATSUYA;OGIHARA TSUTOMU;WATANABE TAKERU;URANO HIROYUKI
分类号 C07C13/567;C07C15/24;G03F7/004 主分类号 C07C13/567
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