| 摘要 |
PURPOSE: A magnetic random access memory cell is provided to dynamically reduce cell size and costs by being used as a matching device. CONSTITUTION: A first strong ferromagnetic layer has first storage magnetization. A first tunnel barrier layer(22) is included between the first strong ferromagnetic layer and a soft ferromagnetic layer. A second strong ferromagnetic layer has second storage magnetization(250). A second tunnel barrier layer is included between the soft ferromagnetic layer and the second strong ferromagnetic layer. A sense layer(21) has sensing magnetization(210) which can be freely arranged. A magnetic element comprises an anti-ferromagnetic layer(20) and a second anti- ferroelectric layer(26). |
