发明名称 HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS
摘要 A component includes a substrate and a capacitor formed in contact with the substrate. The substrate can consist essentially of a material having a coefficient of thermal expansion of less than 10 ppm/° C. The substrate can have a surface and an opening extending downwardly therefrom. The capacitor can include at least first and second pairs of electrically conductive plates and first and second electrodes. The first and second pairs of plates can be connectable with respective first and second electric potentials. The first and second pairs of plates can extend along an inner surface of the opening, each of the plates being separated from at least one adjacent plate by a dielectric layer. The first and second electrodes can be exposed at the surface of the substrate and can be coupled to the respective first and second pairs of plates.
申请公布号 KR101188918(B1) 申请公布日期 2012.10.08
申请号 KR20110104751 申请日期 2011.10.13
申请人 发明人
分类号 H01G4/12;H01L27/02 主分类号 H01G4/12
代理机构 代理人
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