发明名称 Front-End Circuit of Low Supply-Voltage Memory Interface Receiver
摘要 A circuit includes a reference voltage generator configured to generate a first reference voltage and a second reference voltage, wherein the first reference voltage is higher than a half of a positive power supply voltage, and the second reference voltage is lower than the half of the positive power supply voltage. An n-type differential amplifier includes a first and a second NMOS transistor, wherein a gate of the first NMOS transistor is coupled to an input node, and a gate of the second NMOS transistor is configured to receive the first reference voltage. A p-type differential amplifier is operated by the positive supply voltage and includes a first and a second PMOS transistor. A gate of the first PMOS transistor is coupled to the input node, and a gate of the second PMOS transistor is configured to receive the second reference voltage.
申请公布号 US2012249247(A1) 申请公布日期 2012.10.04
申请号 US201113077600 申请日期 2011.03.31
申请人 HSU YING-YU;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HSU YING-YU
分类号 H03F3/04 主分类号 H03F3/04
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