| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device which is easy to use, offers high-speed operation, and modifies the demand for driving circuits. <P>SOLUTION: According to an embodiment, there is provided a nitride semiconductor device comprising: first to fourth transistors of n-channel type each including a nitride semiconductor; and a resistance. The first transistor includes a first gate, a first source, and a first drain. The second transistor includes a second gate, a second source connected to the first gate, and a second drain. The third transistor includes a third gate, a third source connected to the first source, and a third drain connected to the first gate and the second source. The fourth transistor includes a fourth gate connected to the third gate, a fourth source connected to the first source and the third source, and a fourth drain connected to the second gate. One end of the resistance is connected to the second drain, and the other end is connected to the second gate and the fourth drain. <P>COPYRIGHT: (C)2013,JPO&INPIT |
