发明名称 WAFER LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME
摘要 An exemplary embodiment of the present invention discloses a wafer level light emitting diode package that includes a first substrate having an insulating-reflecting layer and an electrode pattern arranged on a surface of the first substrate, and a conductive via, a terminal on which the first substrate is arranged, a second substrate arranged on the first substrate, the second substrate including a cavity-forming opening, the cavity-forming opening exposing the electrode pattern, and a light-emitting chip arranged on the electrode pattern. The light-emitting chip is a flip-bonded light-emitting structure without a chip substrate, and the conductive via electrically connects the electrode pattern and the terminal.
申请公布号 US2012248481(A1) 申请公布日期 2012.10.04
申请号 US201113243764 申请日期 2011.09.23
申请人 SEO WON CHEOL;SEOUL OPTO DEVICE CO., LTD. 发明人 SEO WON CHEOL
分类号 H01L33/46;H01L33/50 主分类号 H01L33/46
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