发明名称 MANUFACTURING METHOD OF CONNECTION STRUCTURE, ANISOTROPIC CONDUCTIVE MATERIAL, AND CONNECTION STRUCTURE
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a connection structure capable of increasing conduction reliability between electrodes. <P>SOLUTION: A manufacturing method of a connection structure 1 comprises: a step of disposing an anisotropic conductive material layer which uses an anisotropic conductive material containing a thermosetting component and conductive particles 5 on a first connection target member 2 having an electrode 2b on an upper surface 2a; a step of laminating a second connection target member 4 having an electrode 4b on a lower surface 4a on an upper surface 3a of the anisotropic conductive material layer; and a step of forming a cured material layer 3 by curing the anisotropic conductive material layer on a full scale via heating. A semiconductor chip is used as the second connection target member 4 and a glass substrate is used as the first connection target member 2. A storage elastic modulus G'<SB POS="POST">25</SB>at 25&deg;C of the anisotropic conductive material layer before the full-scale curing is set to 1&times;10<SP POS="POST">5</SP>Pa or higher and 1&times;10<SP POS="POST">7</SP>Pa or lower. The minimum loss elastic modulus G''<SB POS="POST">min</SB>when the anisotropic conductive material layer before the full-scale curing is heated from 25&deg;C to 250&deg;C is set to 5&times;10<SP POS="POST">2</SP>Pa or higher and 1&times;10<SP POS="POST">5</SP>Pa or lower. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012191195(A) 申请公布日期 2012.10.04
申请号 JP20120037558 申请日期 2012.02.23
申请人 SEKISUI CHEM CO LTD 发明人 ISHIZAWA HIDEAKI;SHIMAOKA JUNICHI;YUKI AKIRA
分类号 H01L21/60;C09J4/02;C09J9/02;C09J11/04;C09J11/06;C09J163/00;C09J201/00;C09J201/02;H01B1/20;H01B5/16;H01R11/01;H01R43/00;H05K3/32 主分类号 H01L21/60
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