发明名称 GATE DRIVING CIRCUIT AND POWER SEMICONDUCTOR MODULE
摘要 <P>PROBLEM TO BE SOLVED: To provide a gate driving circuit capable of performing high-speed and low-loss operation without introducing errors in a switching element, with a simple circuit configuration and with a small number of components. <P>SOLUTION: A primary side of a transformer 15 is connected to an output terminal of a low-side gate driving circuit 2, and a secondary side of the transformer 15 is connected to a gate input of a high-side switching element 5. When a positive gate driving voltage is output from the low-side driving circuit 2, a negative voltage is applied to between a gate and a source of the high-side switching element 5, and the gate voltage can be suppressed to a threshold value or lower. Thereby, when a low-side switching element is turned on, the high-side switching element maintains an off state. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012191408(A) 申请公布日期 2012.10.04
申请号 JP20110052784 申请日期 2011.03.10
申请人 TOSHIBA CORP 发明人 TAKAO KAZUTO;KAMAGA MASATAKE
分类号 H03K17/16;H02M1/08;H03K17/56 主分类号 H03K17/16
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