FORMING BORDERLESS CONTACT FOR TRANSISTORS IN A REPLACEMENT METAL GATE PROCESS

摘要

Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes creating an opening (311) inside a dielectric layer (201), the dielectric layer being formed on top of a substrate (101) and the opening exposing a channel region (102) of a transistor (110) in the substrate; depositing a work-function layer (401) lining the opening and covering the channel region; forming a gate conductor (610) covering a first portion (411) of the work-function layer, the first portion of the work-function layer being on top of the channel region; and removing a second portion of the work-function layer, the second portion of the work-function layer surrounding the first portion of the work-function layer, wherein the removal of the second portion of the work- function layer insulates the first portion of the work-function layer from rest of the work-function layer (412).