SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF

摘要

A silicon carbide semiconductor device (1) is provided that includes a semiconductor layer (12) made of silicon carbide and having a surface (12a) with a trench (20) having a sidewall (19) formed of a crystal plane tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film (13) formed to contact the sidewall (19) of the trench (20). A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the sidewall (19) of the trench (20) and the insulating film (13) is not less than 1×10 21 cm -3 , and the semiconductor device has a channel direction in a range of ±10° relative to the direction orthogonal to the <-2110> direction in the sidewall (19) of the trench (20). A method of manufacturing the silicon carbide semiconductor device is also provided.