发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING PLURAL CELL CAPACITORS STACKED ONE ANOTHER AND MANUFACTURING METHOD THEREOF
摘要 Disclosed herein is a device that includes a semiconductor substrate having a first area, a plurality of cell transistors arranged on the first area of the semiconductor substrate, and a plurality of cell capacitors each coupled to an associated one of the cell transistors, the cell capacitors being provided so as to overlap with one another on the first area.
申请公布号 US2012248520(A1) 申请公布日期 2012.10.04
申请号 US201213439423 申请日期 2012.04.04
申请人 ELPIDA MEMORY, INC. 发明人 UCHIYAMA HIROYUKI
分类号 H01L27/108 主分类号 H01L27/108
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