| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern capable of forming a resist pattern excellent in etching durability in a negative development process, and to provide a resist composition for negative development used in the method for forming a resist pattern. <P>SOLUTION: A method for forming a resist pattern includes the steps of: forming a resist film on a support by using a resist composition containing a base component (A) whose solubility in an organic solvent decreases by an action of an acid, and an acid generator component (B) generating an acid by exposure; exposing the resist film; and patterning the resist film by negative development using a developing solution containing an organic solvent to form a resist pattern. A resin component (A1) having a constitutional unit (a1) that is derived from an acrylic ester and contains an acid decomposable group whose polarity increases by an action of an acid is used for the base component (A). The acid generator component (B) comprises an acid generator (B1) having a cyclic structure in an anion moiety. <P>COPYRIGHT: (C)2013,JPO&INPIT |
