发明名称 PLASMA PROCESSING APPARATUS
摘要 In an inductively coupled plasma processing apparatus, it is possible to control a plasma density distribution while suppressing a wavelength effect within a RF antenna. Provided at a ceiling of a chamber 10 or above a dielectric window 52 is a circular ring-shaped RF antenna 54 for generating inductively coupled plasma within the chamber 10. This RF antenna 54 includes two coil segments 84(1) and 84(2) each having a semicircular arc shape. The coil segments 84(1) and 84(2) are electrically connected to each other in parallel with respect to a high frequency power supply unit 62. On the dielectric window 52, a circular ring-shaped floating coil 60 having a variable capacitor 58 coupled to the RF antenna 54 by an electromagnetic induction is provided. The variable capacitor 58 is varied in a certain range by a capacitance varying unit 82 under the control of a main controller 80.
申请公布号 US2012247679(A1) 申请公布日期 2012.10.04
申请号 US201213434922 申请日期 2012.03.30
申请人 YAMAZAWA YOHEI;TOKYO ELECTRON LIMITED 发明人 YAMAZAWA YOHEI
分类号 B05C9/00;H01L21/3065 主分类号 B05C9/00
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