| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a low-noise amplifier is hardly affected by ground potentials of other circuit units. <P>SOLUTION: A semiconductor device 1 comprises: a sealant 2 composed of an insulating resin; a plurality of leads 7 provided inside and outside the sealant; a tab 4 that is provided in the sealant and has a semiconductor element fixing region and a wire connection region on its main surface; a semiconductor element that is fixed on the semiconductor element fixing region and has electrode terminals 9 on its exposed main surface; conductive wires 10 connecting the electrode terminals of the semiconductor element and the leads; and conductive wires connecting the electrode terminals of the semiconductor element and the wire connection region of the tab 4. Circuits monolithically formed in the semiconductor element are composed of a plurality of circuit units. In a specified circuit unit (a low-noise amplifier) of a part of the plurality of circuit units, all the ground terminals of the electrode terminals of the semiconductor element are connected to the leads via the wires without being connected to the tab via the wire. <P>COPYRIGHT: (C)2013,JPO&INPIT |
