发明名称 |
MEMORY DEVICES, TRANSISTORS, MEMORY CELLS, AND METHODS OF MAKING SAME |
摘要 |
<p>A memory device includes an array of memory cells and peripheral devices. At least some of the individual memory cells include carbonated portions that contain SiC. At least some of the peripheral devices do not include any carbonated portions. A transistor includes a first source/drain, a second source/drain, a channel including a carbonated portion of a semiconductive substrate that contains SiC between the first and second sources/drains and a gate operationally associated with opposing sides of the channel.</p> |
申请公布号 |
EP1779425(B1) |
申请公布日期 |
2012.10.03 |
申请号 |
EP20050803899 |
申请日期 |
2005.07.25 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MOULI, CHANDRA |
分类号 |
H01L21/82;H01L27/06;H01L27/105 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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