发明名称 Thin film dielectrics with perovskite structure and preparation thereof
摘要 Methods of making a ternary oxide and a perovskite-related ternary oxide structure are described. The methods include reacting a binary oxide with a metal oxide or a metal hydroxide to form a ternary oxide dielectric layer on a substrate. Powders, anodes, pressed articles, and capacitors including the ternary oxide or perovskite-related ternary oxide structure as a dielectric layer or other layers are further described.
申请公布号 US8277896(B2) 申请公布日期 2012.10.02
申请号 US20070847446 申请日期 2007.08.30
申请人 MARIANI ROBERT D.;KOENITZER JOHN W.;GLOBAL ADVANCED METALS, USA, INC. 发明人 MARIANI ROBERT D.;KOENITZER JOHN W.
分类号 B05D3/02;C01G1/02;C01G33/00;C01G35/00;H01G4/12;H01L21/316 主分类号 B05D3/02
代理机构 代理人
主权项
地址