发明名称 |
Semiconductor structures and methods of manufacturing the same |
摘要 |
A semiconductor structure has embedded stressor material for enhanced transistor performance. The method of forming the semiconductor structure includes etching an undercut in a substrate material under one or more gate structures while protecting an implant with a liner material. The method further includes removing the liner material on a side of the implant and depositing stressor material in the undercut under the one or more gate structures.
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申请公布号 |
US8278164(B2) |
申请公布日期 |
2012.10.02 |
申请号 |
US20100700059 |
申请日期 |
2010.02.04 |
申请人 |
LI XI;ONTALUS VIOREL C.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LI XI;ONTALUS VIOREL C. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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