发明名称 |
Semiconductor device, method for producing the same, sensor and electro-optical device |
摘要 |
A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device. |
申请公布号 |
US8278136(B2) |
申请公布日期 |
2012.10.02 |
申请号 |
US20090474931 |
申请日期 |
2009.05.29 |
申请人 |
TANAKA ATSUSHI;UMEDA KENICHI;HIGASHI KOHEI;NANGU MAKI;FUJIFILM CORPORATION |
发明人 |
TANAKA ATSUSHI;UMEDA KENICHI;HIGASHI KOHEI;NANGU MAKI |
分类号 |
H01L51/40;B05D5/12;C23C14/30;H01L21/00;H01L21/44 |
主分类号 |
H01L51/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|