发明名称 Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device
摘要 The invention provides a method to enhance the programmability of a prompt-shift device, which reduces the programming time to sub-millisecond times, by altering the extension and halo implants, instead of simply omitting the same from one side of the device as is the case in the prior art prompt-shift devices. The invention includes an embodiment in which no additional masks are employed, or one additional mask is employed. The altered extension implant is performed at a reduced ion dose as compared to a conventional extension implant process, while the altered halo implant is performed at a higher ion dose than a conventional halo implant. The altered halo/extension implant shifts the peak of the electrical field to under an extension dielectric spacer.
申请公布号 US8278197(B2) 申请公布日期 2012.10.02
申请号 US20080130460 申请日期 2008.05.30
申请人 BREITWISCH MATTHEW J.;CHEEK ROGER W.;JOHNSON JEFFREY B.;LAM CHUNG H.;RAINEY BETH A.;ZIERAK MICHAEL J.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BREITWISCH MATTHEW J.;CHEEK ROGER W.;JOHNSON JEFFREY B.;LAM CHUNG H.;RAINEY BETH A.;ZIERAK MICHAEL J.
分类号 H01L21/265 主分类号 H01L21/265
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