| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can efficiently reduce interface state density at an interface between a substrate and a gate insulation film while inhibiting characteristic deterioration in a constituent material of the semiconductor device. <P>SOLUTION: In a semiconductor device manufacturing method, a transistor including a gate insulation film 102 and a gate electrode 103 is formed on a substrate 100. Further, a wiring structure including one and more layers of wiring layers 113, 115 is formed on the substrate 100 by performing one and more times a process of forming one layer of a wiring layer 110 on the substrate 100 and a process of processing the one layer of the wiring layer 110 to a wiring pattern. Still further, after at least one layer of the wiring layer 110 among one and more layers of the wiring layers 113, 115 is processed to the wiring pattern, annealing of the substrate 100 is performed by irradiation of micro waves on the substrate 100. <P>COPYRIGHT: (C)2012,JPO&INPIT |
