发明名称 PLASMA PROCESSING DEVICE, AND CONTROL METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing device capable of controlling the ratio of currents of inductive coupling antennas over a wide range with stability, and a control method therefor. <P>SOLUTION: The plasma processing device has two or more lines of inductive coupling antennas, and a capacitive coupling antenna. In the device, the inductive coupling antennas and the capacitive coupling antenna are electrically connected in series. The plasma processing device comprises: a first regulator circuit operable to regulate RF currents flowing through the inductive coupling antennas; a second regulator circuit operable to regulate the ratio of RF currents flowing through the inductive coupling antennas and the capacitive coupling antenna; sensors operable to measure the RF currents flowing through the inductive coupling antennas respectively; and control means operable to control the ratio of currents flowing through the inductive coupling antennas to make the ratio constant while performing the monitoring for an excessive current toward the first regulator circuit based on signals from the sensors. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012185948(A) 申请公布日期 2012.09.27
申请号 JP20110047071 申请日期 2011.03.04
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 YUHARA TAKAHIRO;GUSHIKEN MASAHARU
分类号 H05H1/46 主分类号 H05H1/46
代理机构 代理人
主权项
地址