| 摘要 |
According to one embodiment, a power semiconductor device includes a first conductor, a second conductor, and a first semiconductor chip. The first conductor includes a first portion and a second portion. The first portion includes a first major surface and a second major surface opposite thereto. The second portion includes a third major surface intersecting at right angles with the first major surface and a fourth major surface opposite to the third major surface. The fourth major surface becomes farther from the third major surface to become continuous with the second major surface with proximity to the first major surface. The second conductor includes a third portion and a fourth portion. The third portion is similar to the first portion. The fourth portion is similar to the second portion. The first semiconductor chip is placed between the second portion and the forth portion.
|
