recessed gate electrode structure and method for forming the same, semiconductor device having recessed gate electrode and method for manufacturing the same,申请号KR20050084761-传众专利搜索

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发明名称	recessed gate electrode structure and method for forming the same, semiconductor device having recessed gate electrode and method for manufacturing the same
摘要
申请公布号	KR100711520(B1)	申请公布日期	2007.04.27
申请号	KR20050084761	申请日期	2005.09.12
申请人		发明人
分类号	H01L29/78	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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