发明名称 |
PHOTO ACTIVE LAYER BY SILICON QUANTUM DOT AND THE FABRICATION METHOD THEREOF |
摘要 |
Provided is a photo active layer for a solar cell or a light emitting diode and a fabricating method thereof. The photo active layer is formed by alternately stacking silicon quantum dot layers in which a plurality of silicon quantum dots containing conductive type impurities are formed in a medium, which is a silicon compound, and conductive layers, which are polycrystalline silicon layers, containing the same conductive type impurities as those of the silicon quantum dots. |
申请公布号 |
WO2012128564(A2) |
申请公布日期 |
2012.09.27 |
申请号 |
WO2012KR02060 |
申请日期 |
2012.03.22 |
申请人 |
KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE;KIM, KYUNG JOONG;HONG, SEUNG HUI;PARK, JAE HEE;JANG, JONG SHIK |
发明人 |
KIM, KYUNG JOONG;HONG, SEUNG HUI;PARK, JAE HEE;JANG, JONG SHIK |
分类号 |
H01L31/042;H01L31/18;H01L33/04 |
主分类号 |
H01L31/042 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|