MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT, AND TANDEM-TYPE PHOTOELECTRIC CONVERSION ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a technique for improving conversion efficiency in a photoelectric conversion device which uses a cheap material.

SOLUTION: A manufacturing method of a photoelectric conversion element 20 includes: a preparation step of preparing a first semiconductor layer 22 composed of polycrystalline cuprous oxide; a semiconductor layer formation step of forming a second semiconductor layer 24 which is composed of non-doped zinc oxide and whose thickness is 10 to 100 nm on the first semiconductor layer 22; and a conductive layer formation step of forming a transparent conductive layer 26 on the second semiconductor layer 24. The semiconductor layer formation step is performed at an atmospheric temperature of 50°C or lower.

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