FLOATING GATE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR PRODUCING SUCH DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a floating gate device with good data retention and electrical performance capable of downsizing NAND flash memory devices electrically and physically.

SOLUTION: The present invention is related to a method for producing a floating gate memory device, wherein a semiconductor-on-insulator substrate is provided, formed of a base substrate 100, a buried insulation layer, and a monocrystalline semiconductor top layer. Trenches are made in the substrate, to form elevated fin-shaped structures 111-114 having a monocrystalline top portion that acts as the floating gate. Parts of the buried insulation layer act as a tunnel oxide layer 101' of the floating gate devices. A gate dielectric layer 160 is formed on the side walls of the monocrystalline top portions by thermal oxidation, allowing low thickness of the gate dielectric layer.

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