发明名称 THIN FILM FORMING METHOD, AND THIN FILM FORMING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a sputtering apparatus so constituted that film qualities such as a film thickness distribution or a specific resistance value can be substantially homogenized all over the surface of a treated substrate when a prescribed thin film is formed by reactive sputtering. <P>SOLUTION: Between a plurality of sputter chambers 11a and 11b in which targets 31a to 31h of an equal number are equidistantly juxtaposed, a treated substrate S is transferred to positions confronting the individual targets. An electric power is thrown into the individual targets in the sputter chambers, in which the treated substrate exhibits, so that the individual targets are sputtered to laminate identical or different thin films on the surface of the treated substrate. At this time, the stop position of the treated substrate is so changed that the portion of the treated substrate surface to confront the region between the individual targets may shift between the mutually continuing sputter chambers. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012184511(A) 申请公布日期 2012.09.27
申请号 JP20120141323 申请日期 2012.06.22
申请人 ULVAC JAPAN LTD 发明人 TAKEI MASAKI;ISHIBASHI SATORU;KIYOTA JUNYA;ICHIHASHI YUJI;SATO SHIGEMITSU
分类号 C23C14/34;C23C14/35;C23C14/40;H01L21/285 主分类号 C23C14/34
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