发明名称 WAFER EDGE CONDITIONING FOR THINNED WAFERS
摘要 The present invention relates to a method for minimizing breakage of wafers during or after a wafer thinning process. A method of forming a rounded edge to the portion of a wafer remaining after surface grinding process is provided. The method comprises providing a semiconductor wafer having an edge and forming a recess in the edge of the wafer using any suitable mechanical or chemical process. The method further comprises forming a substantially continuous curved shape for at least the edge of the wafer located above the recess. Advantageously, the shape of the wafer is formed prior to the backside grind process to prevent problems caused by the otherwise presence of a sharp edge during the backside grind process.
申请公布号 US2012241916(A1) 申请公布日期 2012.09.27
申请号 US201113053803 申请日期 2011.03.22
申请人 DAUBENSPECK TIMOTHY HARRISON;GAMBINO JEFFREY P.;MUZZY CHRISTOPHER DAVID;SAUTER WOLFGANG;SULLIVAN TIMOTHY DOOLING;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DAUBENSPECK TIMOTHY HARRISON;GAMBINO JEFFREY P.;MUZZY CHRISTOPHER DAVID;SAUTER WOLFGANG;SULLIVAN TIMOTHY DOOLING
分类号 H01L29/02;H01L21/302 主分类号 H01L29/02
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