发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE WAFER AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 <p>PURPOSE: A semiconductor light emitting device wafer and a method for manufacturing a semiconductor light emitting device are provided to efficiently suppress a crack by absorbing stress and distortion with a sealing unit formed between light emitting units. CONSTITUTION: A plurality of semiconductor light emitting devices(1) are integrally formed on a semiconductor light emitting device wafer(10). A semiconductor light emitting device wafer includes a light emitting unit and a wavelength converting unit(40). The light emitting unit includes a first main surface and a second main surface which is opposite to the first main surface. The wavelength converting unit is provided to the first main surface and includes fluorescent substances. The thickness of the wavelength converting unit is changed based on a distribution of a wavelength or intensity of light emitted from the light emitting unit on the surface of the wafer.</p>
申请公布号 KR20120106624(A) 申请公布日期 2012.09.26
申请号 KR20120026600 申请日期 2012.03.15
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAKA TOMOMICHI
分类号 H01L33/50;H01L33/48 主分类号 H01L33/50
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