| 摘要 |
A method of manufacturing a semiconductor device includes providing a substrate having junction regions and contact plugs formed thereon. A second insulating layer is formed over a first insulating layer and includes first and second pad holes extending in different directions and exposing the contact plugs. First and second conductive pads are formed in the first and second pad holes, respectively. A third insulating layer is formed and includes dual damascene patterns and pad contact holes. The dual damascene pattern exposes the first conductive pad, and each pad contact hole exposes a second conductive pad. First pad contact plugs and a first bit line are formed in the dual damascene pattern and a second pad contact plug is formed in each pad contact hole. A fourth insulating layer including trenches is formed. Each trench exposes a second pad contact plug. A second bit line is formed in each trench. |
