发明名称 |
Variable impedance memory device having simultaneous program and erase, and corresponding methods and circuits |
摘要 |
An integrated circuit may include: access circuits that couple first electrodes of a plurality of programmable metallization cells (PMC) to access paths in parallel, each PMC comprising a solid ion conducting material formed between the first electrode and a second electrode; a plurality of write circuits, each coupled to a different access path, and each coupling the corresponding access path to a first voltage in response to input write data having a first value and to a second voltage in response to the input write data having a second value; and a node setting circuit that maintains second electrodes of the PMCs at a substantially constant third voltage while write circuits couple the access paths to the first or second voltages. |
申请公布号 |
US8274842(B1) |
申请公布日期 |
2012.09.25 |
申请号 |
US20090566790 |
申请日期 |
2009.09.25 |
申请人 |
HOLLMER SHANE CHARLES;GILBERT NAD EDWARD;DINH JOHN;ADESTO TECHNOLOGIES CORPORATION |
发明人 |
HOLLMER SHANE CHARLES;GILBERT NAD EDWARD;DINH JOHN |
分类号 |
G11C7/10 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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