发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to control the damage caused by a stage to be generated on the rear side of a wafer while preventing the degradation of productivity. CONSTITUTION: A semiconductor wafer(10) is replaced on a stage. An insulating layer(20) and a concave part(22) are formed on the semiconductor wafer. A conductor film(30) is formed on the bottom of the concave part and the top and sidewall of the insulating layer. The conductor film is formed with a CVD(Chemical Vapor Deposition) method or an ALD(Atomic Layer Deposition) method. An unnecessary portion of the conductor film formed on the top of the insulating layer is eliminated.
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申请公布号 |
KR20120104953(A) |
申请公布日期 |
2012.09.24 |
申请号 |
KR20120025701 |
申请日期 |
2012.03.13 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
SAKAMOTO MISATO;KATOU YOSHITAKE;YAMAMOTO YOUICHI;KYOUNO TAKASHI;YAMAMOTO CHIKARA;MOTOSAWA TERUKAZU;MAEDA MITSUO;ITOU HIROSHI |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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