发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PURPOSE: A method for manufacturing a semiconductor device is provided to control the damage caused by a stage to be generated on the rear side of a wafer while preventing the degradation of productivity. CONSTITUTION: A semiconductor wafer(10) is replaced on a stage. An insulating layer(20) and a concave part(22) are formed on the semiconductor wafer. A conductor film(30) is formed on the bottom of the concave part and the top and sidewall of the insulating layer. The conductor film is formed with a CVD(Chemical Vapor Deposition) method or an ALD(Atomic Layer Deposition) method. An unnecessary portion of the conductor film formed on the top of the insulating layer is eliminated.
申请公布号 KR20120104953(A) 申请公布日期 2012.09.24
申请号 KR20120025701 申请日期 2012.03.13
申请人 RENESAS ELECTRONICS CORPORATION 发明人 SAKAMOTO MISATO;KATOU YOSHITAKE;YAMAMOTO YOUICHI;KYOUNO TAKASHI;YAMAMOTO CHIKARA;MOTOSAWA TERUKAZU;MAEDA MITSUO;ITOU HIROSHI
分类号 H01L21/205 主分类号 H01L21/205
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