| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to electronically connect between storage node contact plugs or prevent connection defects between a plurality of storage node contact plugs and lower side electrodes, thereby increasing an operation feature of a semiconductor device. CONSTITUTION: A storage node contact hole(265) is formed by etching a first insulation film(260). A first photosensitive film is formed in the contact hole. A second photosensitive film is formed by exposing a part of the first photosensitive film. The first photosensitive film which is not exposed is removed. A second insulation film(290) is formed in an area of the removed first photosensitive film. The second photosensitive film is removed. A storage node contact plug(300) is formed in the area of the removed second photosensitive film by filling poly silicon.
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