发明名称 Reference Voltage Optimization for Flash Memory
摘要 A system includes a voltage generator and a reference voltage setting module. The voltage generator is configured to generate K voltages to be applied to memory cells. The K voltages are used to determine a reference voltage used to read the memory cells, where K is an integer greater than 1. The reference voltage setting module is configured to selectively set the reference voltage to a value between two adjacent ones of the K voltages or one of the two adjacent ones of the K voltages.
申请公布号 US2012236655(A1) 申请公布日期 2012.09.20
申请号 US201213447789 申请日期 2012.04.16
申请人 YANG XUESHI 发明人 YANG XUESHI
分类号 G11C16/28 主分类号 G11C16/28
代理机构 代理人
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