发明名称 CHEMICAL AMPLIFYING RESIST MATERIAL AND PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a chemical amplifying resist material that provides high resolution and storage stability, and is useful for microfabrication using an electron ray, a far-ultraviolet ray, and an extreme ultraviolet ray. <P>SOLUTION: A chemical amplifying resist material contains as essential components: (A) a tertiary amine compound represented by the formula (1); (B) an acid generating agent represented by the formula (2); (C) a base resin, which is a resin insoluble or poorly-soluble to alkaline developer having an acidic functional group protected by an acid labile group, and turns soluble to alkaline developer when the acid labile group is deprotected; and (D) organic solvent. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012181306(A) 申请公布日期 2012.09.20
申请号 JP20110043556 申请日期 2011.03.01
申请人 SHIN ETSU CHEM CO LTD 发明人 WATANABE TAKESHI;KOBAYASHI TOMOHIRO;SAGEHASHI MASAYOSHI;NAGATA TAKESHI;OSAWA YOICHI;TANIGUCHI RYOSUKE
分类号 G03F7/004;C07C219/06;C07C309/12;G03F7/039;H01L21/027 主分类号 G03F7/004
代理机构 代理人
主权项
地址