| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a group III/V semiconductor material having a smaller and/or reduced number of internal detects, and to provide a semiconductor structure or element containing such a group III/V semiconductor material having a smaller and/or reduced number of detects. <P>SOLUTION: The method of forming a ternary group III nitride material includes a step for epitaxially growing a ternary group III nitride material on a substrate in a chamber. The epitaxial growth includes a step for preparing, in the chamber, a precursor gas mixture having a comparatively high ratio of the partial pressure of a nitride precursor and the partial pressure of one or a plurality of group III precursors in the chamber. Since the ratio is comparatively high at least partially, the layer of a ternary group III nitride material can be grown to a high final thickness containing small V-pit defects therein. A semiconductor structure including such a layer of a ternary group III nitride material is fabricated using such method. <P>COPYRIGHT: (C)2012,JPO&INPIT |
