| 发明名称 |
Method for Removing at least Sections of a Layer of a Layer Stack |
| 摘要 |
In a method for removing at least sections of at least one semiconductor layer (4) of a layer stack (1), an optically dense metallisation layer (3) is heated such that the semiconductor layer located on top is detached.
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| 申请公布号 |
US2012238049(A1) |
申请公布日期 |
2012.09.20 |
| 申请号 |
US201013512707 |
申请日期 |
2010.11.29 |
| 申请人 |
MOLDOVAN VASILE RAUL;NEUGEBAUER CHRISTOPH TOBIAS;MANZ AUTOMATION AG |
发明人 |
MOLDOVAN VASILE RAUL;NEUGEBAUER CHRISTOPH TOBIAS |
| 分类号 |
H01L21/268;H01L31/18 |
主分类号 |
H01L21/268 |
| 代理机构 |
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