发明名称 |
Methods of Fabricating Semiconductor Devices Having Gate Trenches |
摘要 |
Methods of fabricating semiconductor devices including providing a substrate having a channel region defined therein; forming an insulation layer on the substrate; forming a gate trench for forming a gate electrode having a sidewall portion, a bottom portion and an edge portion between the sidewall portion and the bottom portion on the insulation layer, the gate electrode trench overlapping the channel region; and forming a gate electrode in the gate electrode trench. Forming the gate electrode includes forming a first metal layer pattern in the gate electrode trench and forming a second metal layer pattern on the first metal layer pattern.
|
申请公布号 |
US2012238067(A1) |
申请公布日期 |
2012.09.20 |
申请号 |
US201213422223 |
申请日期 |
2012.03.16 |
申请人 |
JEONG WON-CHEOL;YEOH YUN-YOUNG;KIM DONG-WON;PARK HONG-BAE;CHO HAG-JU |
发明人 |
JEONG WON-CHEOL;YEOH YUN-YOUNG;KIM DONG-WON;PARK HONG-BAE;CHO HAG-JU |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|