发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
摘要 <p>PURPOSE: A thin film transistor array panel and a manufacturing method thereof are provided to prevent changes of the features of a thin film transistor according to a manufacturing process, thereby obtaining a superior yield. CONSTITUTION: A gate insulating film(140) is arranged on a gate electrode. An oxide semiconductor(154) is arranged on the gate insulating film. The semiconductor comprises fluorine. A source electrode(173) and a drain electrode(175) are arranged on the oxide semiconductor. A pixel electrode(191) is connected to the drain electrode.</p>
申请公布号 KR20120103953(A) 申请公布日期 2012.09.20
申请号 KR20110021951 申请日期 2011.03.11
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 CHOI, SEUNG HA;CHO, SUNG HAENG;LEE, WOOG EUN;YOON, KAP SOO;KIM, SHO YEON
分类号 G02F1/136;H01L29/786 主分类号 G02F1/136
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