发明名称 SMALL PLASMA CHAMBER SYSTEMS AND METHODS
摘要 A plasma deposition chamber is disclosed. A substrate support for supporting a surface to be processed is in the chamber. A processing head including an array of plasma microchambers is also in the chamber. Each of the plasma microchambers includes an open side disposed over at least a first portion of the surface to be processed. The open side has an area less than an entire area of the surface to be processed. A process gas source is coupled to the chamber to provide a process gas the array of plasma microchambers. A radio frequency power supply is connected to at least one electrode of the processing head. The array of plasma microchambers is configured to generate a plasma using the process gas to deposit a layer over the at least first portion of the surface to be processed. A method for performing a plasma deposition is also disclosed.
申请公布号 KR20120104222(A) 申请公布日期 2012.09.20
申请号 KR20127014385 申请日期 2010.12.02
申请人 LAM RESEARCH CORPORATION 发明人 GOTTSCHO RICHARD;DHINDSA RAJINDER;SRINIVASAN MUKUND
分类号 C23C16/50;C23F4/00;C23G5/00 主分类号 C23C16/50
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