发明名称 |
OXIDE SUBSTRATE, AND MANUFACTURING METHOD FOR SAME |
摘要 |
<p>Provided is an oxide substrate that has a planar surface at an atomic layer level, and that is suitable for the formation of perovskite manganate thin films. One embodiment of the present invention provides an oxide single-crystal substrate (10) having: a single-crystal support substrate (1) comprising SrTiO3 having a (210) surface orientation; and a single-crystal foundation layer (2) of (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7, i.e. LSAT, formed on the surface of the (210) plane of the support substrate. In another embodiment of the present invention, the LSAT foundation layer (2A) is formed in an amorphous state.</p> |
申请公布号 |
WO2012124506(A1) |
申请公布日期 |
2012.09.20 |
申请号 |
WO2012JP55342 |
申请日期 |
2012.03.02 |
申请人 |
FUJI ELECTRIC CO., LTD.;OGIMOTO, YASUSHI |
发明人 |
OGIMOTO, YASUSHI |
分类号 |
C30B29/22;C23C14/08;H01L21/316 |
主分类号 |
C30B29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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