发明名称 OXIDE SUBSTRATE, AND MANUFACTURING METHOD FOR SAME
摘要 <p>Provided is an oxide substrate that has a planar surface at an atomic layer level, and that is suitable for the formation of perovskite manganate thin films. One embodiment of the present invention provides an oxide single-crystal substrate (10) having: a single-crystal support substrate (1) comprising SrTiO3 having a (210) surface orientation; and a single-crystal foundation layer (2) of (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7, i.e. LSAT, formed on the surface of the (210) plane of the support substrate. In another embodiment of the present invention, the LSAT foundation layer (2A) is formed in an amorphous state.</p>
申请公布号 WO2012124506(A1) 申请公布日期 2012.09.20
申请号 WO2012JP55342 申请日期 2012.03.02
申请人 FUJI ELECTRIC CO., LTD.;OGIMOTO, YASUSHI 发明人 OGIMOTO, YASUSHI
分类号 C30B29/22;C23C14/08;H01L21/316 主分类号 C30B29/22
代理机构 代理人
主权项
地址