NON-VOLATILE MEMORY DEVICE AND READ METHOD THEREOF

摘要

PURPOSE: A nonvolatile memory device and a reading method thereof are provided to improve reliability by reducing the number of error bits due to reading errors. CONSTITUTION: A memory cell array(1100) includes memory cells which are arranged in rows and columns. A page buffer circuit(1400) reads data from the memory cell array. A control logic and input-output interface block(1300) includes a normal read scheduler(1310) which controls a normal read operation and a data recover read scheduler(1320) which controls a data recover read operation and controls the page buffer circuit when a read operation is requested. The normal read scheduler or data recover read scheduler is selected according to selection information from the outside.