| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to easily prevent the generation of a short circuit in a bit line and a storage electrode contact plug by simultaneously forming the bit line and the storage electrode contact plug. CONSTITUTION: A conductive layer filling an insulation film is formed on an upper part of an active area(104). A metal layer and a hard mask layer are formed on an upper part of the conductive layer and the insulation film. The hard mask layer, the metal layer, and the conductive layer are etched to form both a bit line(122) connected to a central part of the active area and a preliminary storage electrode contact plug(124) connected to both end parts of the active area. The hard mask layer, on an upper part of the preliminary storage electrode contact plug, is removed to form a recess. The recess is filled with the conductive layer to form a storage electrode contact plug.
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