| 摘要 |
<p>722,426. Dry plate rectifiers. SIEMENSSCHUCKERTWERKE AKT.-GES. Oct. 31, 1951 [Oct. 1, 1948], No. 25495/51. Class 37. [Also in Group II] A process for producing dry plate rectifier columns comprises (i) building up simultaneously and in spiral staircase fashion electrode and semi-conductive layers on a metal base; (ii) suitably cutting this intermediate product to obtain rectifier columns. The intermediate product from step (i) has not the character of a rectifier due to unavoidable merging of opposing electrode layers producing a short-circuit and the step of cutting (ii) breaks the short-circuit. In the embodiment shown a rotating metal disc 1 receives spirally deposited layers from simultaneously operating vaporizers 3, 4, 5 with 3 consisting of an incandescent nickel wire and 4 containing selenium and 5 containing cadmium or tin-cadmium. Preferably the process takes place in a vacuum container with also the metal disc heated to more than 100‹ C. in order that the selenium may be converted into metallic selenium. The layers may be applied in such manner that the edge of each succeeding layer is set back from the edge of the layer below it. The required rectifier columns are obtained by selective axial cutting. It is stated that the layers may be electrolytically deposited.</p> |
