发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND EXPOSURE APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with no bump, the semiconductor device and an exposure apparatus. <P>SOLUTION: A photosensitive negative resist material that becomes a lower layer resist film is applied onto a film 2 to be processed. Acid is generated by irradiating the lower layer resist material film with exposure light. A lower layer resist film 3b is formed by applying bake processing. By applying development processing, a portion of a non-crosslinked lower layer resist material film is removed while leaving the crosslinked lower layer resist film 3b. By applying a photosensitive negative resist material that becomes an intermediate layer resist film and applying similar exposure processing and development processing, a portion of a non-crosslinked intermediate layer resist material film is removed while leaving the crosslinked intermediate layer resist film 4b. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012178394(A) 申请公布日期 2012.09.13
申请号 JP20110039364 申请日期 2011.02.25
申请人 RENESAS ELECTRONICS CORP 发明人 YAMAGUCHI ATSUMI
分类号 H01L21/027;G03F7/20;G03F7/26 主分类号 H01L21/027
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