| 摘要 |
<P>PROBLEM TO BE SOLVED: To selectively form a p<SP POS="POST">+</SP>region on a p-well and to reduce contact resistance of a metal electrode and the p<SP POS="POST">+</SP>region without using a hard mask in manufacturing a silicon-carbide junction barrier Schottky diode. <P>SOLUTION: A p<SP POS="POST">+</SP>region 4 is formed over an entire upper portion of an n-type epitaxial layer 2 by high-temperature ion implantation, and an n-type region below the p<SP POS="POST">+</SP>region 4a is partially exposed by selectively etching the p<SP POS="POST">+</SP>region 4a, thereby forming a p<SP POS="POST">+</SP>semiconductor projection 4 which is protruded upward from an upper surface of the n-type region. An anode electrode is formed to cover the exposed portion of the n-type region and the p<SP POS="POST">+</SP>semiconductor projection 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
